Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks
- Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks
- 한동석; 구현철; 이솔; 장준연; 한석희; 김은규; 엄종화
- Spin accumulation; Spin diffusion; Two-dimensional electron gas; Vanadium metal mask
- Issue Date
- Journal of the Korean Physical Society
- VOL 55, NO 1, 207-211
- A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In
this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium
hard mask. For the non-local geometry, a R of 4 m
is detected and for the local spin-valve
geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization
switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel
alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter,
indicates the feasibility of spin transistor applications.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.