Characteristics of chirped quantum dot superluminescent diodes

Title
Characteristics of chirped quantum dot superluminescent diodes
Authors
배형철박홍이유영채한일기김종수
Keywords
quantum dots; superluminescent diodes; chirped quantum dots; light sources; optical devices; semiconductors
Issue Date
2009-04
Publisher
Physica status solidi. C, Conferences and critical reviews : PSS.
Citation
VOL 6, NO 4, 932-935
Abstract
We compared the superluminescent diodes (SLDs) of two types in order to see the effect of embedding another quantum dots (QDs) layer. The insertion of another QDs layer showed a new possibility for a wider spectrum. In addition, through comparing two kinds of SLD structures, the peak positions of the ground state and excited state were observed to be affected differently by band-filling, thermal effect, and the overlap of tails of excited state (ES) gain, according to the wafer structure, and the effect of the cap layer is superior to the carrier non-uniformity. We also revealed the temperature sensitivity of carriers in QDs through measuring characteristic temperature.
URI
http://pubs.kist.re.kr/handle/201004/35577
ISSN
1610-1634
Appears in Collections:
KIST Publication > Article
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