InAs quantum dot superluminescent diodes with trench structure

Title
InAs quantum dot superluminescent diodes with trench structure
Authors
유영채김이현한일기
Keywords
quantum dots; superluminescent diodes; trench structure; light sources; optical devices; semiconductors
Issue Date
2010-05
Publisher
Journal of materials science, Materials in electronics
Citation
VOL 21, NO 5, 445-449
Abstract
Abstract Using a trench structure, we have realized improved reliability for processing InAs quantum-dotbased J-shaped superluminescent diodes (SLDs) with shallow-etched waveguides. The observed drastic decrease of output power in shallow-etched-waveguide SLDs is recovered with the deep-etched waveguide. The output power increases with decreasing separation between the waveguide and the trench. The maximum output power of the SLDs with the trench structure exceeds 25 mW. The trench structure should help to achieve low production costs while retaining high reliability.
URI
http://pubs.kist.re.kr/handle/201004/35578
ISSN
0957-4522
Appears in Collections:
KIST Publication > Article
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