Parametric growth of InAlSb meta-morphic buffer layers on GaAs for the application to InSb-based electronic devices

Title
Parametric growth of InAlSb meta-morphic buffer layers on GaAs for the application to InSb-based electronic devices
Authors
신상훈송진동김수연김형준장준연한석희김태근
Keywords
InSb; 2DEG; meta-morphic; GaAs
Issue Date
2009-07
Publisher
EP2DS/MSS
Abstract
It has been one of main issues in the commercial and military electronic circuit applications to reduce power consumption and to increase operating speed. In fact, these two issues are in the relation of trade-off with conventional semiconductor materials, and achieving two targets at once had been considered as something beyond ability before 2DEGs using Sbbased semiconductor was introduced [1]. Especially, In(Ga)Sb 2DEGs are the most promising in the view of mobility and low-power consumption (up to ~ 40,000 cm2/Vs @ 300K;see the section 2.9 of ref [1]) The striking characteristic of this In(Ga)Sb 2DEGs is the possibility to fabricate high-speed p-typed hole-driven 2DEGs [2]. This implies that we can imagine something CMOS-like low-power logic devices with III-V semiconductors with high-speed. As a result, this 2DEG structure has been chosen as one of candidates for next- Si [3].
URI
http://pubs.kist.re.kr/handle/201004/35637
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KIST Publication > Conference Paper
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