Growth of low density InGaAs quantum dots using MEMBE

Title
Growth of low density InGaAs quantum dots using MEMBE
Authors
조남기박성준송진동최원준이정일
Keywords
quantum dots; MEMBE; Density
Issue Date
2009-07
Publisher
EP2DS/MSS
Abstract
Recently communication methods utilizing the quantum nature of photons have been suggested for enhancing security. For the realization of optical communication using quantum cryptography, the single photon sources are essential [1]. Trapped single atoms or ions, single molecules, and single semiconductor quantum dots (QDs) have been researched for the single photon sources. Nowadays, the single photon emission from nano-structure cavity containing single QD has been reported [2]. The InGaAs QDs embedded in GaAs layer can emit the light used in the optical fiber communication. Therefore, the single photon sources using InGaAs QDs have compatibility to the technology in use.
URI
http://pubs.kist.re.kr/handle/201004/35639
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KIST Publication > Conference Paper
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