Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes
- Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes
- 조남기; 김광웅; 유성필; 송진동; 최원준; 이정일; 전헌수
- digital-alloy; AlGaAs; GaAs; distributed Bragg’s reflector
- Issue Date
- Usually in 1.3 μm QD VCSEL structure with
In(Ga)As QD on GaAs, they use distributed Bragg
reflectors grown by alternatively repeating of GaAs and
AlGaAs layer. But, if we use analog method for
growing AlGaAs layer on large size wafer, there can be
degrading of the compositional uniformity due to
thermal inequality on wafer surface. In case of QD
VCSEL, the delicate control of the uniformity of the
AlGaAs reflector is very important due to the small
gain spectrum of QD active layer. But by using the
digital-alloy AlGaAs, we can solve these problems.
Because only one kind of GaAs or AlAs layer can be
grown on the wafer surface in the digital-alloy AlGaAs
growing method, the layers do not affected by the
thermal inequality on the wafer surface. So, we made
the distributed Bragg reflector for 1.3 μm optical
devices by digital-alloy AlGaAs.
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