Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes

Title
Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes
Authors
조남기김광웅유성필송진동최원준이정일전헌수
Keywords
digital-alloy; AlGaAs; GaAs; distributed Bragg’s reflector
Issue Date
2009-07
Publisher
EP2DS/MSS
Abstract
Usually in 1.3 μm QD VCSEL structure with In(Ga)As QD on GaAs, they use distributed Bragg reflectors grown by alternatively repeating of GaAs and AlGaAs layer. But, if we use analog method for growing AlGaAs layer on large size wafer, there can be degrading of the compositional uniformity due to thermal inequality on wafer surface. In case of QD VCSEL, the delicate control of the uniformity of the AlGaAs reflector is very important due to the small gain spectrum of QD active layer. But by using the digital-alloy AlGaAs, we can solve these problems. Because only one kind of GaAs or AlAs layer can be grown on the wafer surface in the digital-alloy AlGaAs growing method, the layers do not affected by the thermal inequality on the wafer surface. So, we made the distributed Bragg reflector for 1.3 μm optical devices by digital-alloy AlGaAs.
URI
http://pubs.kist.re.kr/handle/201004/35643
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KIST Publication > Conference Paper
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