Critical exciton kinetic energy in InAs/GaAs quantum dot sample by infrared time resolved spectroscopy

Title
Critical exciton kinetic energy in InAs/GaAs quantum dot sample by infrared time resolved spectroscopy
Authors
하싸안올렉씨송진동최원준조남기이정일
Keywords
InAs/GaAs Quantum dot; radiative and non-radiative decay time; Photo-luminescence; migration enhanced S-K growth
Issue Date
2009-07
Publisher
EP2DS/MSS
Abstract
InAs quantum dot is grown by Migration Enhanced Molecular Beam Epitaxy (MEMBE). Photoluminescence (PL) and time-resolved photoluminescence are carried out at different laser powers and temperatures. The temperature varied from 14K up to 200K. We found two emission peaks near 1.096ev, 1.172ev the emission energy is found to red shift with increasing temperature while there is no change in the peak position with varying laser power. Decay time analysis revealed effective life time at the ground state transition of 512ps at 14K and laser power of 15mW. At the same temperature, the decay time decreases slightly as the laser power increases to reach 503ps at 200 mW laser power. We also investigated the radiative and non-radiative recombination time by varying temperature and laser power. The low value of the radiative recombination time explains the higher PL intensity at low temperature. As the temperature increases the PL peak intensity decreases and radiative life time increases.
URI
http://pubs.kist.re.kr/handle/201004/35644
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KIST Publication > Conference Paper
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