A spin field effect transistor using stray magnetic fields
- A spin field effect transistor using stray magnetic fields
- 구현철; 엄종화; 장준연; 한석희
- Spin-FET; Stray field; Zeeman splitting; Spin filtering; 2DEG
- Issue Date
- Solid-state electronics
- VOL 53, 1016-1019
- A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns
is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected
spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection
and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage
over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic
metal and semiconductor channel.
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