Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots
- Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots
- V. D. Dasika; R. S. Goldman; 송진동; 최원준; 조남기; 이정일
- InAs; Quantum dots; STM
- Issue Date
- Journal of applied physics
- VOL 106, 014315-1-014315-4
- We have investigated the origins of electronic states in individual uncoupled quantum dots QDs
and the surrounding wetting layers WLs using a combination of cross-sectional scanning tunneling
microscopy XSTM and scanning tunneling spectroscopy STS . XSTM images reveal uncoupled
ellipse-shaped QDs with 18 5 nm 9 3 nm major minor axes. Room temperature STS spectra
reveal a gradient in the effective bandgap within the QDs with smallest values near the QD core and
top surfaces. The variations in effective bandgap are apparently dominated by indium composition
gradients, with minimal effects due to the QD shape and strain. Indium composition gradients also
dominate the effective bandgap variations in the WL.
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