Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots

Title
Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots
Authors
V. D. DasikaR. S. Goldman송진동최원준조남기이정일
Keywords
InAs; Quantum dots; STM
Issue Date
2009-07
Publisher
Journal of applied physics
Citation
VOL 106, 014315-1-014315-4
Abstract
We have investigated the origins of electronic states in individual uncoupled quantum dots QDs and the surrounding wetting layers WLs using a combination of cross-sectional scanning tunneling microscopy XSTM and scanning tunneling spectroscopy STS . XSTM images reveal uncoupled ellipse-shaped QDs with 18 5 nm 9 3 nm major minor axes. Room temperature STS spectra reveal a gradient in the effective bandgap within the QDs with smallest values near the QD core and top surfaces. The variations in effective bandgap are apparently dominated by indium composition gradients, with minimal effects due to the QD shape and strain. Indium composition gradients also dominate the effective bandgap variations in the WL.
URI
http://pubs.kist.re.kr/handle/201004/35691
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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