Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor
- Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor
- 추성중; 이병철; 이상명; 박정호; 신현준
- Biosensor; MEMS; Planar waveguide; PECVD; interferometric sensor
- Issue Date
- Journal of micromechanics and microengineering
- VOL 19, NO 9, 095007-1-095007-9
- In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical
vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an
interferometric sensor for detecting biochemical reactions. For the optimization of PECVD
silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF
power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio.
The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150
sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under
400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach–Zehnder interferometric
biosensor based on optical waveguide technology was fabricated under the optimized PECVD
conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon
oxynitride surface was performed and verified with this device.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.