Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

Title
Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor
Authors
추성중이병철이상명박정호신현준
Keywords
Biosensor; MEMS; Planar waveguide; PECVD; interferometric sensor
Issue Date
2009-09
Publisher
Journal of micromechanics and microengineering
Citation
VOL 19, NO 9, 095007-1-095007-9
Abstract
In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach–Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.
URI
http://pubs.kist.re.kr/handle/201004/35707
ISSN
0960-1317
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE