Structural and Electrical Properties of Mn-Doped Bi4Ti3O12 Thin Film Grown on TiN/SiO2/Si Substrate for RF MIM Capacitors

Title
Structural and Electrical Properties of Mn-Doped Bi4Ti3O12 Thin Film Grown on TiN/SiO2/Si Substrate for RF MIM Capacitors
Authors
최주영강이성조경훈성태근남산강종윤윤석진김종희
Keywords
metal?nsulator?etal (MIM) capacitor; low temperature process; embedded; Bi4Ti3O12; high-k; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC)
Issue Date
2009-08
Publisher
IEEE Electron Device Letters
Citation
VOL 56, NO 8, 1631-1636
Abstract
Mn-doped Bi4Ti3O12 (M-B4T3) films were well formed on a TiN/SiO2/Si substrate at 200 ◦C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 ◦C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47 fF/μm2 at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/◦C and 667 ppm/V2, respectively, with a low leakage current density of 7.8 × 10−8 A/cm2 at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/SiO2/Si substrate is a good candidate material for high performance, radio frequency metal–insulator–metal capacitors.
URI
http://pubs.kist.re.kr/handle/201004/35740
ISSN
0741-3106
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE