Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy

Title
Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy
Authors
정두석이수연정증현정병기황철성
Keywords
chalcogenice; x-ray photoelectron spectroscopy; interfacial dipole layer; Ge2Sb2Te5
Issue Date
2009-09
Publisher
European; Phase Change and Ovonics Symposium 2009
Citation
, 176-180
Abstract
We investigated interface between Ge2Sb2Te5 (GST) and a very thin and discontinuous TiN film by analyzing the electron band structure near the Fermi energy using x-ray photoelectron spectroscopy (XPS). The intensity of photoelectrons (PEs) from GST covered with TiN was formulated in a form of the convolution integration. Using this formula the deviation of the PE intensity of the covered GST from that of the uncovered could be evaluated. Three different calculated spectra, one was from the uncovered GST, another from the covered GST, and the other from TiN were fitted to the XPS spectrum of TiN/GST in the vicinity of the Fermi energy. From the fitting, a shift of the valence band spectrum of the covered GST due to Fermi energy alignment after the junction formation was observed. The shift was explained in terms of the formation of an interfacial dipole layer at the TiN/GST interface and space charges in GST attributed to the valence-alternation-pair formation.
URI
http://pubs.kist.re.kr/handle/201004/35898
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KIST Publication > Conference Paper
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