Development of surface-textured hydrogenated ZnO:Al thin-films for mc-Si solar cells

Title
Development of surface-textured hydrogenated ZnO:Al thin-films for mc-Si solar cells
Authors
탁성주강민구박성근장지훈이정철김원목이준성김동환
Keywords
RF magnetron sputter; Surface texture; Hydrogenated ZnO:Al; μc-Si:H solar cells
Issue Date
2009-11
Publisher
Current applied physics : the official journal of the Korean Physical Society
Citation
VOL 9, NO 6, 1318-1322
Abstract
This study addresses the optimization of rf magnetron-sputtered hydrogenated ZnO:Al (HAZO) films as front contacts in microcrystalline silicon solar cells. The front contact of a solar cell has to be highly conductive and highly transparent to visible and infrared radiation. Furthermore, it has to scatter the incident light efficiently in order for the light to be effectively trapped in the underlying silicon layers. In this research, HAZO films were rf-magnetron-sputtered on glass substrates from a ceramic (98 wt% ZnO, 2 wt% Al2O3) target. Various compositions of AZO films on glass substrates were prepared by changing the H2/(Ar + H2) ratio of the sputtering gas. The resulting smooth films exhibited high transparencies (T ≥ 85% for visible light including all reflection losses) and excellent electrical properties (ρ = 2.7 x 10-4 Ω· cm). Depending on their structural properties, these films developed different surface textures upon post-deposition etching using diluted hydrochloric acid. The light-scattering properties of these films could be controlled simply by varying the etching time. Moreover, the electrical properties of the films were not affected by the etching process. Therefore, within certain limits, it is possible to optimize the electro-optical and light-scattering properties separately. The microcrystalline silicon (μc-Si:H)- based p–i–n solar cells prepared using these new texture-etched AZO:H substrates showed high quantum efficiencies in the long wavelength range, thereby demonstrating effective light trapping. Using the optimum AZO:H thin-film textured surface, we achieved a p–i–n μc-Si solar cell efficiency of 7.78%.
URI
http://pubs.kist.re.kr/handle/201004/35955
ISSN
1567-1739
Appears in Collections:
KIST Publication > Article
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