Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots

Title
Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots
Authors
유성필조남기임주영임아람최원준송진동이정일이용탁
Keywords
InAs; Quantum dots; growth interruption
Issue Date
2009-10
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 48, 091103-1-091103-4
Abstract
In this study, we investigated the effect of growth interruption time (tGI) during migration enhanced epitaxy (MEE) growth of self-assembled InAs/GaAs quantum dots (QDs) to control the density of the QDs without any substrate rotation stop during QD formation. By manipulating the growth factor (tGI), the control of QD density in the range of 3:4 109–3:5 1010 dots/cm2, as well as the QD shape, was demonstrated. We concluded that three phenomena occur during growth interruption: 1) In re-evaporation, 2) In segregation, and 3) the redistribution of InAs QDs. From photoluminescence (PL), it is found that the emission wavelength of samples increased from 967.7 to 1151.7nm as tGI increased due to redistribution. In addition, we confirmed PL peak emissions from QDs, quasi-three-dimensional (Q3D) clusters, and wetting layer. As a result, the manipulation of tGI in the MEE method can control the density, uniformity, size, and wavelength of QDs.
URI
http://pubs.kist.re.kr/handle/201004/35957
ISSN
0021-4922
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