Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density
- Title
- Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density
- Authors
- 유성필; 조남기; 임주영; 이혜진; 최원준; 송진동; 이정일; 이용탁
- Keywords
- InAs; Quantum dots; low density
- Issue Date
- 2009-10
- Publisher
- Japanese Journal of Applied Physics, Part 1- Regular Papers
- Citation
- VOL 48, 095506-1-095506-5
- Abstract
- We introduce a thermal treatment, namely, a growth technique to form low-density quantum dots (QDs) with homogeneous InAs
deposition, and study the structural and optical properties of InAs/GaAs QDs during the formation of dots by the thermal treatment. The
structural and optical properties are studied by atomic force microscopy and photoluminescence (PL). We achieve a wide range of dot
densities from 1010 to 106 per cm2 by adjusting the thermal treatment temperature. The uniformity of InAs dots improves as the thermal
treatment temperature increases. Comparing PL spectra with those in the literature, we confirm that the dots in this work are not QDs but
small quasi-three-dimensional (Q3D) clusters. Q3D clusters are left after the thermal treatment. This behavior of Q3D is different from that
of the QDs reported in the literature. We conclude that three phenomena occur during the thermal treatment: 1) In segregation, 2) In reevaporation,
and 3) the intermixing of InAs. As a result, we conclude that the thermal treatment is a very useful method for controlling the
dot density.
- URI
- http://pubs.kist.re.kr/handle/201004/35958
- ISSN
- 0021-4922
- Appears in Collections:
- KIST Publication > Article
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