Parametrical Study on the Preparation of an InAs/AlSb 2DEG Structure for Application to a High-mobility Inverted-doping HEMT

Title
Parametrical Study on the Preparation of an InAs/AlSb 2DEG Structure for Application to a High-mobility Inverted-doping HEMT
Authors
임주영신상훈송진동최원준한석희양해석
Keywords
InAs 2DEG; HEMT; Inverted-doping HEMT; Molecular beam epitaxy; AlSb
Issue Date
2009-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 55, NO 4, 1525-1529
Abstract
We have investigated the change in the electron mobility of InAs/AlSb two-dimensional electron gas (2DEG) structures under various growth conditions. The optimum transport characteristics of the InAs/AlSb 2DEG are achieved when the InAs channel is grown to a proper thickness under a suitable arsenic flux with a modified shutter sequence and with an extra GaSb layer overlaid on the upper AlSb layer of the channel. The resulting inverted-doping high-electron-mobilitytransistor (HEMT) structure including an n-doped InAs layer under the InAs channel, is found to have a mobility as high as ~28,270 ㎠/Vs at 300 K and ~160,300 ㎠/Vs at 77 K. This value of mobility at 300 K is three times larger than that of previously reported for a InAs/AlSb inverteddoping HEMT and is comparable with conventional counterparts. Furthermore, this high-mobility InAs/AlSb inverted-doping HEMT is newly realized.
URI
http://pubs.kist.re.kr/handle/201004/36024
ISSN
0374-4884
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