Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering

Title
Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering
Authors
박호균정진아박용석김한기조운조
Keywords
Transmission electron microscopy; RF sputtering; Electricity; Indium zinc tin oxide (IZTO); Radio-frequency magnetron sputtering; Resistivity; Transparent conducting oxide; Organic light emitting diodes; X-ray diffraction; Scanning electron microscopy
Issue Date
2009-03
Publisher
Thin solid films
Citation
VOL 517, 5563-5568
Abstract
We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition,we could obtain the IZTO filmwith the low resistivity of 3.77×10−4Ωcm, high transparency of ~87% and figure ofmerit value of 21.2×10−3Ω−1, without the post annealing process, even though itwas completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.
URI
http://pubs.kist.re.kr/handle/201004/36216
ISSN
0040-6090
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KIST Publication > Article
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