Zinc oxide thin film transistors using MgO-Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate

Title
Zinc oxide thin film transistors using MgO-Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate
Authors
조남규김동훈김호기홍재민김일두
Keywords
Zinc oxide; Semiconductor; Transistor; Gate insulator; Low voltage operation; *2009년도 기관고유 성과에 반영되었음.; *2009 개인평가에 반영 완료
Issue Date
2010-03
Publisher
Thin solid films
Citation
VOL 518, NO 10, 2843-2846
Abstract
We report on high mobility ZnO thin film transistors (TFTs) (<5 V), utilizing a room temperature grown MgO&#8211;Bi1.5Zn1.0Nb1.5O7 (BZN) composite gate insulator on a glass substrate. 30 mol% MgO added BZN composite gate insulators exhibited greatly enhanced leakage current characteristics (~<2×10&#8722;8 A/㎠ at 0.3 MV/cm) due to the high breakdown strength of MgO, while retaining an appropriate high-k dielectric constant of 32. The ZnO-TFTs with MgO&#8211;BZN composite gate insulators showed a high field-effect mobility of 37.2 ㎠/Vs, a reasonable on&#8211;off ratio of 1.54×105, a subthreshold swing of 460 mV/dec, and a low threshold voltage of 1.7 V.
URI
http://pubs.kist.re.kr/handle/201004/36240
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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