Atomic arrangement variations of 30˚ in-plane rotation domain boundaries in ZnO thn films grown on Si substrates due to thermal annealing

Title
Atomic arrangement variations of 30˚ in-plane rotation domain boundaries in ZnO thn films grown on Si substrates due to thermal annealing
Authors
J.W. Shin이정용노영수김태환최원국
Keywords
domain boundary; ZnO; Si; thermal annealing
Issue Date
2009-06
Publisher
Journal of materials research
Citation
VOL 24, NO 6, 2006-2010
Abstract
High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (011 0) plane with a transition zone and a (011 1) plane without a transition zone. The 30˚ in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5˚ in comparison with that of neighboring 30˚ in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.
URI
http://pubs.kist.re.kr/handle/201004/36259
ISSN
0884-2914
Appears in Collections:
KIST Publication > Article
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