Effect of Substrate Temperature on the Emission Characteristics of ZnO Films Grown by Pulsed Laser Deposition
- Effect of Substrate Temperature on the Emission Characteristics of ZnO Films Grown by Pulsed Laser Deposition
- 김영환; 김성일
- ZnO 박막; 펄스레이저증착법; 기판온도; c-축 배향성; photoluminescence; ZnO thin film; Pulsed laser deposition; Substrate temperature; c-axis texturing
- Issue Date
- 한국진공학회지; Journal of the Korean Vacuum Society
- VOL 18, NO 5, 331-337
- We investigated the growth of ZnO thin films with prominent emission characteristics
through minimizing the formation of defects by using pulsed laser deposition (PLD). To
do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature
of 400-850℃ and then the variation of their structural and optical properties were analyzed
by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO
films were grown with c-axis preferential orientation irrespective of the substrate temperature.
However, the crystallinity and stress state were dependent on the substrate temperature and
the ZnO film deposited at 600℃ showed the best surface morphology and crystallinity with
nearly no strain. And also this film exhibited outstanding emission characteristics from the
viewpoint of full width half maximum of UV emission peak as well as visible emission
due to defects. These results indicate that the emission characteristics of the ZnO films are
strongly related to their structural characteristics influenced by substrate temperature.
Consequently, ZnO films with strong UV emission and nearly no visible emission, which
are applicable to UV emission devices, could be grown at the substrate temperature of 600℃
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