Effect of Substrate Temperature on the Emission Characteristics of ZnO Films Grown by Pulsed Laser Deposition

Title
Effect of Substrate Temperature on the Emission Characteristics of ZnO Films Grown by Pulsed Laser Deposition
Authors
김영환김성일
Keywords
ZnO 박막; 펄스레이저증착법; 기판온도; c-축 배향성; photoluminescence; ZnO thin film; Pulsed laser deposition; Substrate temperature; c-axis texturing
Issue Date
2009-09
Publisher
한국진공학회지; Journal of the Korean Vacuum Society
Citation
VOL 18, NO 5, 331-337
Abstract
We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of 400-850℃ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at 600℃ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of 600℃ by PLD.
URI
http://pubs.kist.re.kr/handle/201004/36357
ISSN
1225-8822
Appears in Collections:
KIST Publication > Article
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