Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs

Title
Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs
Authors
오은순T. K. LeeJ. H. ParkJ. H. ChoiY. J. Park신경호K. Y. Kim
Keywords
Carrier lifetime; spin relaxation time; spin injection; GaAs
Issue Date
2009-08
Publisher
Journal of applied physics
Citation
VOL 106, 043515-1-043515-4
Abstract
We fabricated spin light emitting diodes using oxide tunneling barriers between ferromagnetic materials (Ni0.8Fe0.2 /Co0.9Fe0.1) and semiconductors (GaAs) and investigated the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer. We observed the circular polarization of the free exciton from the electroluminescence spectra due to the spin injection from the ferromagnetic material, whereas the circular polarization of the conduction band to acceptor transition was negligible. From the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer, we found that the spin injection efficiency was larger than 25% between 20 and 180 K, where the magnetic field dependence of the spin lifetime was ignored.
URI
http://pubs.kist.re.kr/handle/201004/36372
ISSN
0021-8979
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KIST Publication > Article
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