Selective epitaxy growth of multiple-stacked InP/InGaAs on the planar type by chemical beam epitaxy

Title
Selective epitaxy growth of multiple-stacked InP/InGaAs on the planar type by chemical beam epitaxy
Authors
한일기이정일
Keywords
화학적 빔 에피탁시; 선택적 영역 에피성장; 화합물반도체; 성장 메카니즘; Chemical beam epitaxy; Selective area epitaxy; Semiconductor; Growth mechanism
Issue Date
2009-11
Publisher
한국진공학회지; Journal of the Korean Vacuum Society
Citation
VOL 18, NO 6, 331-336
Abstract
Selective area epitaxy (SAE) of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of 1 ㎛/h, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.
URI
http://pubs.kist.re.kr/handle/201004/36460
ISSN
1225-8822
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