Lasing characteristics of GaAs-based 1300 nm wavelength region InAs quantum dot laser diode

Title
Lasing characteristics of GaAs-based 1300 nm wavelength region InAs quantum dot laser diode
Authors
김광웅조남기송진동이정일박정호이유종최원준
Keywords
GaAs; In(Ga)As; 양자점 레이저 다이오드; 분자선 에피탁시; Migration enhanced epitaxy; Quantum dot laser diode; Molecular beam epitaxy
Issue Date
2009-07
Publisher
한국진공학회지; Journal of the Korean Vacuum Society
Citation
VOL 18, NO 4, 266-271
Abstract
We have investigated the lasing characteristics of GaAs-based 1300 nm wavelength region InAs Quantum Dot Laser Diode grown by Migration Enhanced Molecular Beam Epitaxy. Under a pulsed and CW operation, we observed the state switching of lasing wavelength from ground state (1302 nm) to excited state (1206 nm) due to the gain saturation of ground state. Under a pulsed operation, Jth=92 A/㎠, λL=1311 nm and under a CW operation, Jth=247 A/㎠, λL=1320 nm.
URI
http://pubs.kist.re.kr/handle/201004/36469
ISSN
1225-8822
Appears in Collections:
KIST Publication > Article
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