Transmission electron microscopy study on the crystallization of Sb-Se-Te ternary alloys
- Transmission electron microscopy study on the crystallization of Sb-Se-Te ternary alloys
- 윤종문; 김은태; 이정용; 김용태
- SbSeTe; transmission electron microscopy
- Issue Date
- Japanese Journal of Applied Physics, Part 1- Regular Papers
- VOL 48, 105501-1-105501-3
- The microstructure of Sb–Se–Te ternary alloy thin films annealed at 220, 230, and 300 C by rapid thermal annealing (RTA) was
investigated using high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the Tm
of Ge2Sb2Te5 (~616℃), the lower Tm of the Sb–Se–Te (417℃) thin film can contribute toward reducing power consumption for the reset
process of phase change materials. The horizontal long grains—grown along the interface in a fully crystallized Sb–Se–Te thin film sample
and annealed at 300℃ for 10 min—were hexagonal structured Sb2SeTe2 with 15 layers; the c-axis was perpendicular to the substrate.
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