Transmission electron microscopy study on the crystallization of Sb-Se-Te ternary alloys

Title
Transmission electron microscopy study on the crystallization of Sb-Se-Te ternary alloys
Authors
윤종문김은태이정용김용태
Keywords
SbSeTe; transmission electron microscopy
Issue Date
2009-10
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 48, 105501-1-105501-3
Abstract
The microstructure of Sb–Se–Te ternary alloy thin films annealed at 220, 230, and 300 C by rapid thermal annealing (RTA) was investigated using high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the Tm of Ge2Sb2Te5 (~616℃), the lower Tm of the Sb–Se–Te (417℃) thin film can contribute toward reducing power consumption for the reset process of phase change materials. The horizontal long grains—grown along the interface in a fully crystallized Sb–Se–Te thin film sample and annealed at 300℃ for 10 min—were hexagonal structured Sb2SeTe2 with 15 layers; the c-axis was perpendicular to the substrate.
URI
http://pubs.kist.re.kr/handle/201004/36476
ISSN
0021-4922
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KIST Publication > Article
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