Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
- Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
- A. Gruverman; D. Wu; H. Lu; Y. Wang; 장호원; C. M. Folkman; M. Ye. Zhuravlev; D. Felker; M. Rzchowski; C.-B. Eom; E. Y. Tsymbal
- tunneling electroresistance; ferroelectric tunnel junction; nanosclae; BaTiO3; PFM
- Issue Date
- Nano letters
- VOL 9, NO 10, 3539-3543
- Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick
epitaxial BaTiO3 single-crystalline thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties
is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in
resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are
promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
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