Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

Title
Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
Authors
A. GruvermanD. WuH. LuY. Wang장호원C. M. FolkmanM. Ye. ZhuravlevD. FelkerM. RzchowskiC.-B. EomE. Y. Tsymbal
Keywords
tunneling electroresistance; ferroelectric tunnel junction; nanosclae; BaTiO3; PFM
Issue Date
2009-08
Publisher
Nano letters
Citation
VOL 9, NO 10, 3539-3543
Abstract
Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
URI
http://pubs.kist.re.kr/handle/201004/36518
ISSN
1530-6984
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE