Electrical Properties of Bi5Nb3O15 Thin Film Grown on TiN/SiO2/Si at Room Temperature for Metal-Insulator-Metal Capacitors

Title
Electrical Properties of Bi5Nb3O15 Thin Film Grown on TiN/SiO2/Si at Room Temperature for Metal-Insulator-Metal Capacitors
Authors
조경훈송태근최주영김진성남산강종윤윤석진김종희
Keywords
Bi5Nb3O15; high-k; metal-insulator-metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC)
Issue Date
2009-06
Publisher
IEEE Electron Device Letters
Citation
VOL 30, NO 6, 614-616
Abstract
Buckling was observed in Bi5Nb3O15 (BiNbO) films grown on TiN/SiO2/Si at 300 ℃ but not in films grown at room temperature and annealed at 350 ℃. The 45-nm-thick films showed a high capacitance density and a low dissipation factor of 8.81 fF/μm2 and 0.97% at 100 kHz, respectively, with a low leakage current density of 3.46 nA/cm2 at 2 V. The quadratic and linear voltage coefficients of capacitance of this film were 846 ppm/V2 and 137 ppm/V, respectively, with a low temperature coefficient of capacitance of 226 ppm/℃ at 100 kHz. This suggests that a BiNbO film grown on a TiN/SiO2/Si substrate is a good candidate material for high-performance metal–insulator–metal capacitors.
URI
http://pubs.kist.re.kr/handle/201004/36564
ISSN
0741-3106
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KIST Publication > Article
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