Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films

Title
Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films
Authors
탁성주옥영우강민구임희진김원목김동환
Keywords
ZnO; Al doping; Hydrogenated; rf magnetron sputtering
Issue Date
2009-10
Publisher
Journal of electroceramics
Citation
VOL 23, 548-553
Abstract
This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al2O3). Various AZO films on glass were prepared by changing the H2/(Ar+H2) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H2 flow ratio, respectively. As a result, the AZO/H films grown with 2% H2 addition showed excellent electrical properties with a resistivity of 4.98×104 Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H2 flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied.
URI
http://pubs.kist.re.kr/handle/201004/36589
ISSN
1385-3449
Appears in Collections:
KIST Publication > Article
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