Low frequency noise of single junction GaAs solar cell structure

Title
Low frequency noise of single junction GaAs solar cell structure
Authors
이정일유병용Gerard Ghibaudo김성일한일기
Keywords
solar cell; low frequency noise; p-n junction; compound semiconductor
Issue Date
2009-06
Publisher
20th International conference on noise and fluctions
Citation
, 387-390
Abstract
In this paper we report the preliminary results of current-voltage and low-frequency noise measurements on GaAs single junction solar cell with and without multi-quantum well intrinsic layer. The current-voltage characteristics showed typical curves for semiconductor p-n junctions. The spectral density of low-frequency noise shows l//behavior in general. However, both structures showed Lorentzian components in addition to the 1/f behavior. Noise sources are discussed from the analysis of the low-frequency noise data and the current-voltage characteristics, with available models for noise generation.
URI
http://pubs.kist.re.kr/handle/201004/36617
Appears in Collections:
KIST Publication > Conference Paper
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