Physical understanding of temperature dependent band gap energies in InAs nanostructures

Title
Physical understanding of temperature dependent band gap energies in InAs nanostructures
Authors
올렉씨하싸안하승규송진동최원준조남기이정일
Keywords
InAs; Quantum dots; photoluminescence spectroscopy; phonon energy; Fan equation
Issue Date
2009-07
Publisher
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices June 24 ?26, 2009 / Haeundae Grand Hotel, Busan, Korea
Citation
, 1a.5
Abstract
Optical properties of InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated. The temperature dependence are reported. The activation energies Ea1 and Ea2 are found to be 47 meV and 256 meV, respectively. Fitting the photoluminescence (PL) peak position with Fan equation yields numerical values for A-parameter and phonon energy. Difference between bulk and QD values for A-parameter is due to higher contribution of phonon energy in QDs. It is also worth telling that A-parameter is influenced by higher values of electron and hole effective masses in QDs. Increases of phonon energy in QDs is attributed to higher distortion and strain effects in quantum structures.
URI
http://pubs.kist.re.kr/handle/201004/36732
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KIST Publication > Conference Paper
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