Physical understanding of temperature dependent band gap energies in InAs nanostructures
- Physical understanding of temperature dependent band gap energies in InAs nanostructures
- 올렉씨; 하싸안; 하승규; 송진동; 최원준; 조남기; 이정일
- InAs; Quantum dots; photoluminescence spectroscopy; phonon energy; Fan equation
- Issue Date
- 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices June 24 ？26, 2009 / Haeundae Grand Hotel, Busan, Korea
- , 1a.5
- Optical properties of InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated. The
temperature dependence are reported. The activation energies Ea1 and Ea2 are found to be 47 meV and 256 meV, respectively.
Fitting the photoluminescence (PL) peak position with Fan equation yields numerical values for A-parameter and phonon
energy. Difference between bulk and QD values for A-parameter is due to higher contribution of phonon energy in QDs. It is
also worth telling that A-parameter is influenced by higher values of electron and hole effective masses in QDs. Increases of
phonon energy in QDs is attributed to higher distortion and strain effects in quantum structures.
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