A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

Title
A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5
Authors
이수연정두석정증현우철박영욱안형우정병기
Keywords
Phase change memory; threshold switching; Ge2Sb2Te5; amorphous chalcogenide; *2009년도 개인평가에 반영되었음
Issue Date
2010-01
Publisher
Applied physics letters
Citation
VOL 96, NO 2, 023501-1-023501-3
Abstract
We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (Vth) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (tdel) of the threshold switching of Ge2Sb2Te5 and successfully described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material.
URI
http://pubs.kist.re.kr/handle/201004/36740
ISSN
0003-6951
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KIST Publication > Article
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