Giant magnetoresistance in ferromagnet/organic semiconductor/ferromagnet heterojunctions
- Giant magnetoresistance in ferromagnet/organic semiconductor/ferromagnet heterojunctions
- Jung-Woo Yoo; 장호원; V. N. Prigodin; C. Kao; C. B. Eom; A. J. Epstein
- Giant magnetoresistance; FM/OSC/FM heterojunctions; Organic semiconductor spacer.; Tunneling magnetoresistance; 2M24180; 2M24190; 2E21110; 2M24260
- Issue Date
- Physical review B, Condensed matter and materials physics
- VOL 80, NO 20, 205207-1-205207-9
- We report the spin injection and transport in ferromagnet/organic semiconductor/ferromagnet (FM/OSC/FM)
heterojunctions using rubrene (C42H28) as an organic semiconductor spacer. For completeness of our study,
both tunneling magnetoresistance (TMR) and giant magnetoresistance (GMR) were studied by varying the
thickness of the rubrene layer (5–30 nm). A thorough study of the device characteristics reveals spin-polarized
carrier injection into and subsequent transport through the OSC layer. When the thickness of the rubrene layers
are beyond the tunneling limit, the device currents are limited by carrier injection and bulk transport. The
carrier injection is well described with phonon-assisted field emission. The behavior of GMR in response to
bias field and temperature shows significant differences from that of TMR.
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