Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures

Title
Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures
Authors
유영채한일기이정일이주인김은규
Keywords
양자점; 고휘도 발광소자; trench structure; semiconductors
Issue Date
2009-12
Publisher
ISDRS
URI
http://pubs.kist.re.kr/handle/201004/36962
Appears in Collections:
KIST Publication > Conference Paper
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