Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

Abstract

We report broad-band superluminescent diodes (SLDs) with different active layers using a selfassembled InAs quantum-dot (QD) structure grown by using atomic layer molecular beam epitaxy. The photoluminescence and the electroluminescence measurements show a relationship between the emission properties and different activelayer structures of the QD-SLD These results explain the possibility of QD-based SLDs exceeding the performance of quantumwell-based SLDs.