Possibility of SOI Fabrication Using Plasma Source Ion Implantation with High-Power Pulsed RF Plasma

Title
Possibility of SOI Fabrication Using Plasma Source Ion Implantation with High-Power Pulsed RF Plasma
Authors
김용우한승희
Issue Date
2009-02
Publisher
FUSION SCIENCE AND TECHNOLOGY
Citation
VOL 55, NO 2T, 209-212
Abstract
Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 ;Aring& and 400 ;Aring&, respectively, in the sample implanted with the dose of 2.5 × 1017 #/cm2 at the ion energy of -75 kV and annealed at 1350 °C for 30 min in Ar+O2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source.
URI
http://pubs.kist.re.kr/handle/201004/37007
ISSN
1536-1055
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KIST Publication > Article
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