Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape

Title
Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape
Authors
권혜영우준택이대욱김태환박용주
Issue Date
2009-04
Publisher
Physica status solidi. B, Basic research
Citation
VOL 246, NO 4, 854-857
Abstract
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi-ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E1-HH1) in the InAs/GaAs coupled double QDs, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E1-HH1) interband transition energies at several temperatures, as determined from the temperature-dependent photoluminescence spectra.
URI
http://pubs.kist.re.kr/handle/201004/37015
ISSN
0370-1972
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