Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN

Title
Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN
Authors
V. Rajagopal Reddy김상호홍현기윤상원안재평성태연
Issue Date
2009-01
Publisher
Journal of materials science, Materials in electronics
Citation
VOL 20, NO 1, 9-13
Abstract
We report on the formation of thermally stable and low-resistance Ti/Au-based ohmic contacts to n-type GaN (4.0 x 1018 cm-3) by using a W barrier layer. It is shown that the electrical characteristic of the sample is considerably improved upon annealing at 900 ℃ for 1 min in a N2 ambient. The contacts produce the specific contact resistance as low as 6.7 x 10-6 Ω ㎠ after annealing. The Norde and current–voltage methods are used to determine the effective Schottky barrier heights (SBHs). It is shown that annealing results in a reduction in the SBHs as compared to that of the as-deposited sample. Auger electron spectroscopy (AES), scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) examinations show that nitride and gallide phases are formed at the contact/GaN interface. Based on the AES, STEM and XRD results, a possible ohmic formation mechanism is described and discussed.
URI
http://pubs.kist.re.kr/handle/201004/37023
ISSN
0957-4522
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE