Study on Contact Resistance on the Performance of Oxide Thin Film Transistors

Title
Study on Contact Resistance on the Performance of Oxide Thin Film Transistors
Authors
이재상구상모이상렬
Keywords
ZrO2; Thin film transistor; a-IGZO
Issue Date
2009-09
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 22, NO 9, 747-750
Abstract
The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ㎛) and channel lengths (70, 30, and 5 ㎛)) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.
URI
http://pubs.kist.re.kr/handle/201004/37030
ISSN
1226-7945
Appears in Collections:
KIST Publication > Article
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