Properties of BiSbTe3 Thin Film Prepared by MOCVD and Fabrication of Thermoelectric Devices

Title
Properties of BiSbTe3 Thin Film Prepared by MOCVD and Fabrication of Thermoelectric Devices
Authors
권성도윤석진주병권김진상
Keywords
Thin film; Thermoelectric; MOCVD; Bismuth-antimony-telluride
Issue Date
2009-05
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 22, NO 5, 443-447
Abstract
Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type Bi0.4Sb1.6Te3 and n-type Bi2Te3 thin films. Firstly, the p-type thermoelectric element was patterned after growth of 5 ㎛ thickness of Bi0.4Sb1.6Te3 layer. Again n-type Bi2Te3 film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for . The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ㎛ is obtained at the temperature difference of 45 K.
URI
http://pubs.kist.re.kr/handle/201004/37031
ISSN
1226-7945
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE