Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator

Title
Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator
Authors
조경철장성필정유진주병권이상렬
Issue Date
2009-12
Publisher
ICAMD 2009
URI
http://pubs.kist.re.kr/handle/201004/37088
Appears in Collections:
KIST Publication > Conference Paper
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