Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate

Title
Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate
Authors
임주영송진동최원준H. S. Yang
Keywords
InAs; Si; quantum dots
Issue Date
2010-02
Publisher
Physica Status Solidi. A, Applications and Materials Science
Citation
VOL 207, NO 2, 391-395
Abstract
The purpose of this work is to find optimal conditions for the growth of three-dimensional (3D) InAs islands on (2 x 1) (001) Si substrate using modified Stranski–Krastanow (S–K) method. From the analysis of atomic-force-microscopy (AFM) images and reflection-high-energy-electron-diffraction (RHEED) patterns, we have found that InAs islands can be grown on Si when the growth temperature is in the range of 370–430 ℃ and also when In-injection of more than three periods is used. At the growth temperature of 390 ℃ and In-injection of four periods, uniform distribution of islands with the highest density of about 600 /㎛2 were obtained. The average width and height of these islands were 36.1 ± 9.2 nm and 6.2 ± 2.0 nm, respectively.
URI
http://pubs.kist.re.kr/handle/201004/37132
ISSN
18626300
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