Fabrication of Nanopatterned Oxide Layer on GaAs Substrate by using Block Copolymer and Reactive Ion Etching

Title
Fabrication of Nanopatterned Oxide Layer on GaAs Substrate by using Block Copolymer and Reactive Ion Etching
Authors
강길범권순묵김성일김용태박정호
Keywords
블록 공중합체; 이온식각; GaAs; 나노패터닝; Block Copolymer; Copolymer Lithography; Nanotemplate; Reactive lon Etching
Issue Date
2009-12
Publisher
마이크로전자 및 패키징학회지; Journal of Microelectronics and Packaging Society
Citation
VOL 16, NO 4, 29-32
Abstract
Dense and periodic arrays of nano-sized holes were patterned in oxide thin film on GaAs substrate. To obtain the nano-size patterns, self-assembling diblock copolymer was used to produce thin film of uniformly distributed parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene (PS) matrix. The PMMA cylinders were removed with UV expose and acetic acid rinse to produce PS nanotemplate. By reactive ion etching, pattern of the PS template was transferred to under laid silicon oxide layer. Transferred patterns were reached to the GaAs substrate by controlling the dry etching time. We confirmed the achievement of etching through the removing oxide layer and observation of GaAs substrate surface. Optimized etching time was 90 to 100 sec. Pore sizes of the nanopattern in the silicon oxide layer were 20-22 nm.
URI
http://pubs.kist.re.kr/handle/201004/37152
ISSN
1226-9360
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KIST Publication > Article
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