Tunneling vs. giant magnetoresistance in organic spin valve
- Tunneling vs. giant magnetoresistance in organic spin valve
- Jung-Woo Yoo; 장호원; V.N. Prigodin; C. Kao; C.B. Eom; A.J. Epstein
- Organic spin valve; Tunneling magnetoresistance; Giant magnetoresistance; Spin injection; Thermionic field emission; 2E21722
- Issue Date
- Synthetic metals
- VOL 160, NO 3-4, 216-222
- We studied magnetoresistance (MR) in La2/3Sr1/3MnO3 (LSMO)/organic semiconductor (OSC)/Fe heterojunction
devices using rubrene (C42H28) as an organic semiconductor. Efficient spin polarized tunneling
using a hybrid barrier (oxide (1.2 nm)/rubrene (5 nm)) was observed. Devices with a thin layer of rubrene
as the barrier may have magnetic clusters and/or pinholes in the barrier, which could explain significant
variations of MR among devices. As the thickness of the rubrene layer is increased, device current
becomes strongly limited by carrier injection resulting in strong temperature and bias dependent device
resistance. The carrier injection in these devices can be described with thermionic field emission at
the metal/OSC interface and is analyzed with both empirical and theoretical models. The effect of carrier
transport through the spacer on the magnetoresistance for organic-based spin valve is discussed.
The observed giant magnetoresistance (GMR) in 20nm rubrene device demonstrates the spin polarized
carrier injection and transport through the rubrene OSC layer.
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