Generation of charged nanoparticles during the synthesis of silicon nanowires by chemical vapor deposition
- Generation of charged nanoparticles during the synthesis of silicon nanowires by chemical vapor deposition
- 김찬수; 곽일조; 최경진; 박재관; 황농문
- Si nanoparticles; nanowire growth; size distribution; differential mobility analyzer; faraday cup electrometer
- Issue Date
- The journal of physical chemistry. C, Nanomaterials and Interfaces.
- VOL 114, NO 8, 3390-3395
- The generation of charged nanoparticles in the gas phase has frequently been reported during the synthesis
of thin films and nanostructures, such as nanowires, using chemical vapor deposition (CVD). In an effort to
confirm whether charged silicon nanoparticles were also generated during the synthesis of Si nanowires by
CVD, a differential mobility analyzer (DMA) combined with a Faraday cup electrometer (FCE) was connected
to an atmospheric-pressure CVD reactor under typical conditions for Si nanowire growth. DMA measurements
showed that both positively and negatively charged nanoparticles were abundantly generated in the gas phase
during CVD. The process parameters such as reactor temperature, molar ratio of SiCl4/H2, and hydrogen flow
rate affected not only the growth behavior of the Si nanowires but also the size distribution of both positively
and negatively charged nanoparticles.
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