Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy

Title
Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy
Authors
유성필조남기임주영최원준송진동이정일Y.T. LEEC.G. PARK
Keywords
InAs quantum dot; Molecular beam epitaxy; Strain reducing layer
Issue Date
2010-03
Publisher
Physica E, Low-dimensional systems & nanostructures
Citation
VOL 42, NO 5, 1536-1539
Abstract
We investigated the effect of InGaAs and AlGaAs combination strain reducing layers on InAs quantum dots (QDs) grown by migration enhanced epitaxy. The samples were examined by cross-sectional transmission electron microscopy, low-temperature and power dependent photoluminescence (PL). We observed three different size distributions of QDs in the atomic force microscopy image. We found that PL peak 1, 2, and 3 came from three different size distributions, and the energy level of QDs could be modified by changing strain reducing layers irrelevantly to controlling QD height in our samples. Furthermore, we elucidated the role of InGaAs and AlGaAs layer on the energy level modification and related cross-sectional morphology of the QDs.
URI
http://pubs.kist.re.kr/handle/201004/37211
ISSN
1386-9477
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KIST Publication > Article
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