Buried-Gate Fin and Recess Channel MOSFET for Sub-30 nm DRAM Cell Transistors with High Performance and Low GIDL Current

Title
Buried-Gate Fin and Recess Channel MOSFET for Sub-30 nm DRAM Cell Transistors with High Performance and Low GIDL Current
Authors
송재영김종필김상완오정훈류경창박재현김가람김현우Atteq Ur Rehman이종덕신형철박병국
Issue Date
2009-06
Publisher
IEEE 2009 Silicon Nanoelectronics Workshop
URI
http://pubs.kist.re.kr/handle/201004/37215
Appears in Collections:
KIST Publication > Conference Paper
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