Body-Raised Double-Gate Structure for 1T DRAM

Title
Body-Raised Double-Gate Structure for 1T DRAM
Authors
김가람김상완송재영김종필류경창오정훈박재현김현우박병국
Keywords
1T DRAM; Z-RAM; SOI; Raised body
Issue Date
2009-06
Publisher
2009 IEEE Nanotechnology Materilas and Devices Conference
Citation
, 259-263
Abstract
Higher sensing margin and longer retention time are critical issues for commercializing 1T DRAM. In this paper, we propose a body-raised double-gate structure to improve sensing margin and retention time of 1T DRAM and confirm the improvements through 3D simulation. This structure shows about 20% higher sensing margin than the planar structure. We have achieved longer retention time by using high doped raised body and lowering the magnitude of gate bias at hold state.
URI
http://pubs.kist.re.kr/handle/201004/37216
Appears in Collections:
KIST Publication > Conference Paper
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