Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine
- Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine
- 김용현; 정증현; 이경석; 박종극; 백영준; 성태연; 김원목
- Transparent conducting oxide; ZnO; Co-doping; Fluorine; Hydrogen
- Issue Date
- Applied surface science
- VOL 256, NO 16, 5102-5107
- Fluorine and hydrogen co-doped ZnO:Al (AZO) films were prepared by radio frequency (rf) magnetron
sputtering of ZnO targets containing 1 wt.% Al2O3 on Corning glass at substrate temperature of 150 ◦C
with Ar/CF4/H2 gas mixtures, and the structural, electrical and optical properties of the as-deposited and
the vacuum-annealed films were investigated. In as-deposited state, films with fairly low resistivity of
3.9–4×10−4 Ωcm and very low absorption coefficient below 900cm−1 when averaged in 400–800nm
could be fabricated. After vacuum-heating at 300 ◦C, theminimumresistivity of 2.9×10−4 Ωcm combined
with low absorption loss in visible region, which enabled the figure of merit to uplift as high as 4Ω−1,
could be obtained for vacuum-annealed film. It was shown that, unlike hydrogenated ZnO films which
resulted in degradation upon heating in vacuum at moderately high temperature, films with fluorine
addition could yield improved electrical properties mostly due to enhanced Hall mobility while preserving
carrier concentration level. Furthermore, stability in oxidizing environment could be improved
by fluorine addition, which was ascribed to the filling effect of dangling bonds at the grain boundaries.
These results showed that co-doping of hydrogen and fluorine into AZO films with low Al concentration
could be remarkably compatible with thin film solar cell applications.
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