High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

Title
High stability of amorphous hafnium-indium-zinc-oxide thin film transistor
Authors
정유진조경철이상렬
Keywords
amorphous semiconductors; annealing; charge injection; hafnium compounds; indium compounds; thin film transistors; vacancies (crystal); X-ray photoelectron spectra
Issue Date
2010-04
Publisher
Applied physics letters
Citation
VOL 96, NO 15, 152102-1-152102-3
Abstract
Time dependence of the threshold voltage (Vth) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 °C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation.
URI
http://pubs.kist.re.kr/handle/201004/37295
ISSN
0003-6951
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KIST Publication > Article
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