Spin-based field effect transistor

Spin-based field effect transistor
Issue Date
Korea-Japan Progress in Spintronics Symposium (associated with Korean physical society spring meeting)
Spin transport electronics offers additional function to overcome the physical limitations of conventional electronic devices. The spin field effect transistor suggested by Datta and Das in 1990, [1] a lateral semiconducting channel with two ferromagnetic electrodes, lies at the central consideration of spintronics research. The special feature of the spin field effect transistor is the modulation of sourcedrain conductance controlled by gate voltage dependence of spin precession. We have fabricated the lateral spin valve devices that demonstrate electrical spin injection and gate modulation at the same time. The device consists of two ferromagnetic electrodes (FMs) on the top of an InAs quantum well channel and a gate electrode [2]. Using non-local geometry, the chemical potential change at drain was measured with bias current at the source. The spin precession angle is modulated by the gate voltage and the detected voltage depends on the alignment between the drain magnetization and the arriving spins at the drain. The observed oscillatory channel conductance is nicely matched with the gate-controlled the spin-orbit interaction strength. [1] S. Datta, and B. Das, Appl. Phys. Lett., 56, 665 (1990). [2] H. C. Koo, J. H. Kwon, J. Eom, J. Chang, S. H. Han, and M. Johnson, Science, 325, 1515 (2009).
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
RIS (EndNote)
XLS (Excel)


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.