Spin-based field effect transistor
- Spin-based field effect transistor
- 구현철; 권재현; 엄종화; 장준연; 한석희
- Issue Date
- Korea-Japan Progress in Spintronics Symposium (associated with Korean physical society spring meeting)
- Spin transport electronics offers additional function to overcome the physical limitations of conventional electronic devices. The spin
field effect transistor suggested by Datta and Das in 1990,  a lateral semiconducting channel with two ferromagnetic electrodes, lies
at the central consideration of spintronics research. The special feature of the spin field effect transistor is the modulation of sourcedrain
conductance controlled by gate voltage dependence of spin precession. We have fabricated the lateral spin valve devices that
demonstrate electrical spin injection and gate modulation at the same time. The device consists of two ferromagnetic electrodes (FMs)
on the top of an InAs quantum well channel and a gate electrode . Using non-local geometry, the chemical potential change at drain
was measured with bias current at the source. The spin precession angle is modulated by the gate voltage and the detected voltage
depends on the alignment between the drain magnetization and the arriving spins at the drain. The observed oscillatory channel
conductance is nicely matched with the gate-controlled the spin-orbit interaction strength.  S. Datta, and B. Das, Appl. Phys. Lett.,
56, 665 (1990).  H. C. Koo, J. H. Kwon, J. Eom, J. Chang, S. H. Han, and M. Johnson, Science, 325, 1515 (2009).
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- KIST Publication > Conference Paper
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