High-resolution X-ray photoelectron spectroscopy study of InTe thin film in structural phase transition from amorphous to crystalline phase

Title
High-resolution X-ray photoelectron spectroscopy study of InTe thin film in structural phase transition from amorphous to crystalline phase
Authors
이영미박용섭선창우이정용신현준김용태정민철
Keywords
X-ray photoelectron spectroscopy; InTe; Phase change memory; Indium telluride; Chemical state; Structural phase transition
Issue Date
2010-05
Publisher
Thin solid films
Citation
VOL 518, NO 15, 4442-4445
Abstract
We investigated the chemical states of InTe thin film in the structural phase transition from the amorphous to the crystalline phase, using high-resolution X-ray photoelectron spectroscopy with synchrotron radiation. We confirmed the structural phase transition by transmission electron microscopy. Clean amorphous InTe (a-InTe) free of oxygen impurity was obtained after Ne+ ion sputtering at the ion beam energy of 1 kV for 1 h. Additionally, we obtained crystalline InTe (c-InTe) from clean a-InTe by annealing at 250 °C in an ultra-high vacuum. During the transition to the crystalline phase, the binding energy of the Te 4d core-level was unchanged, but the peak width was somewhat wider than in the amorphous phase. In the case of the In 4d core-level, the chemical shift was 0.1 eV at the higher binding energy between the amorphous and crystalline phases. The valence band maximum was shifted at the higher binding energy of 0.34 eV. We assumed that the Te atom was almost fixed and that the In atoms moved in the tight binding energy state to the center of the 4-Te atoms.
URI
http://pubs.kist.re.kr/handle/201004/37401
ISSN
0040-6090
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