High-resolution X-ray photoelectron spectroscopy study of InTe thin film in structural phase transition from amorphous to crystalline phase
- High-resolution X-ray photoelectron spectroscopy study of InTe thin film in structural phase transition from amorphous to crystalline phase
- 이영미; 박용섭; 선창우; 이정용; 신현준; 김용태; 정민철
- X-ray photoelectron spectroscopy; InTe; Phase change memory; Indium telluride; Chemical state; Structural phase transition
- Issue Date
- Thin solid films
- VOL 518, NO 15, 4442-4445
- We investigated the chemical states of InTe thin film in the structural phase transition from the amorphous to the crystalline phase, using high-resolution X-ray photoelectron spectroscopy with synchrotron radiation. We confirmed the structural phase transition by transmission electron microscopy. Clean amorphous InTe (a-InTe) free of oxygen impurity was obtained after Ne+ ion sputtering at the ion beam energy of 1 kV for 1 h. Additionally, we obtained crystalline InTe (c-InTe) from clean a-InTe by annealing at 250 °C in an ultra-high vacuum. During the transition to the crystalline phase, the binding energy of the Te 4d core-level was unchanged, but the peak width was somewhat wider than in the amorphous phase. In the case of the In 4d core-level, the chemical shift was 0.1 eV at the higher binding energy between the amorphous and crystalline phases. The valence band maximum was shifted at the higher binding energy of 0.34 eV. We assumed that the Te atom was almost fixed and that the In atoms moved in the tight binding energy state to the center of the 4-Te atoms.
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